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| QSB363C Subminiature Plastic Silicon Infrared Phototransistor September 2005 QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24 Clear Plastic Package Matched Emitters: QEB363 or QEB373 Tape & Reel Option (See Tape & Reel Specifications) Lead Form Options: Gullwing, Yoke, Z-Bend Description The QSB363C is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. Package Dimensions 0.276 (7.0) MIN EMITTER 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) 0.019 (0.5) 0.012 (0.3) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4) SCHEMATIC COLLECTOR 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) EMITTER NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QSB363C Rev. 1.0.2 QSB363C Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Notes 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 s, T = 10 ms. 5. D = 940 nm, GaAs. Symbol TOPR TSTG TSOL TSOL VCEO VECO PC Rating -25 to +85 -40 to +85 260 260 30 5 75 Unit C C C C V V mW Dissipation(1) Electrical/Optical Characteristics (TA =25C) Parameters Peak Sensitivity Wavelength Reception Angle Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage On-State Collector Current Collector-Emitter Saturation Voltage Rise Time Fall Time VCE = 20V, Ee = 0mW/cm2 IC = 100 A, Ee = 0mW/cm2 IE = 100 A, Ee = 0mW/cm2 VCE = 5V Ee = 0.5 mW/cm2 IC = 2 mA Ee = 1 mW/cm2 VCE = 5 V, IC = 1 mA RL = 1000 Test Conditions Symbol P ICEO BVCEO BVECO IC(on) VCE (SAT) tr tf Min. -- -- -- 30 5 1.0 -- -- -- Typ. 940 12 -- -- -- 1.5 -- 15 15 Max -- -- 100 -- -- -- 0.4 -- -- Units nm nA V V mA V s s 2 QSB363C Rev. 1.0.2 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Curves Fig. 1 Collector Power Dissipation vs. Ambient Temperature 100 1.0 TA = 25C Fig. 2 Spectral Sensitivity Relative Spectral Sensitivity Collector Power Dissipation Pd (mW) 80 0.8 0.6 60 40 0.4 20 0.2 0 -25 0 0 25 50 75 85 100 100 300 500 700 900 1100 1300 Ambient Temperature TA (C) Wavelength (nm) Fig. 3 Relative Collector Current vs. Ambient Temperature 160 10 VCE = 5 V Ee = 1 mW/cm2 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 0.001 0.01 Fig. 4 Collector Current vs. Irradiance VCE = 5 V TA = 25C Relative Collector Current (%) Collector Current IC (mA) 1 0.1 0.01 0.1 1 10 Ambient Temperature TA (C) Irradiance Ee (mW/cm2) Fig. 5 Collector Dark Current vs. Ambient Temperature Collector Dark Current ICEO (A) 10-6 5 2 10 5 2 10-8 5 2 10-9 5 2 10-10 0 25 50 75 100 0 0 -7 Fig. 6 Collector Current vs. Collector Emitter Voltage 14 12 VCE = 20 V Collector Current IC (mA) 10 Ee=1.50mW/cm2 8 Ee=1.25mW/cm2 6 4 Ee=0.75mW/cm2 2 Ee=0.5mW/cm2 1 2 3 4 Ee=1.0mW/cm2 Ambient Temperature (C) Collector Emitter Voltage VCE (V) 3 QSB363C Rev. 1.0.2 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor Package Dimensions Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes Gull Wing Lead Configuration o0.0750.008 (o1.90.2) Cathode 0.0980.004 (2.50.1) C L 0.0790.008 (2.00.2) Z-Bend Lead Configuration o0.0750.008 (1.90.2) Cathode 0.0980.004 (2.50.1) C L 0.0790.008 (2.00.2) 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) 0.0550.004 (1.40.1) 0.0290.004 (0.750.1) C L 0.0200.004 (0.50.1) 0.0160.004 (0.40.1) 0.0200.004 (0.50.1) C L 0.1570.008 (4.00.2) - + 0.0060.002 (0.150.05) 0.0250.004 (0.650.1) 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) (0.80.1) 0.0060.002 (0.150.05) 0.120.008 (3.050.2) 0.1690.008 (4.30.2) +0.005 0.032 +0.005 -0 (0.83 -0 +0.13 0.0120.004 (0.30.1) 0.0290.004 (0.750.1) 0.0550.004 (1.40.1) 0.023 -0 0.2280.008 (5.80.2) ) (0.6 +0.13 ) -0 Yoke Lead Configuration o0.0750.008 (1.90.2) Cathode 0.0980.004 (2.50.1) C L 0.0790.008 (2.00.2) 0.0200.004 (0.50.1) C L 0.0060.002 (0.150.05) 0.1850.008 (4.70.2) 0.2910.008 (7.40.2) 0.0290.004 (0.750.1) 0.0550.004 (1.40.1) 4 QSB363C Rev. 1.0.2 0.1060.008 (2.70.2) R0.016.004 (0.40.1) 0.0250.004 (0.650.1) + Polarity 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) - 0.0160.004 (0.40.1) 0.0510.004 (1.30.1) 0.0250.004 (0.650.1) Polarity 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) + Polarity 0.0430.008 0.0550.008 R0.031.004 (1.10.2) (1.40.2) - 0.0160.004 (0.40.1) www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 QSB363C Rev. 1.0.2 www.fairchildsemi.com |
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